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STB18N65M5 Datasheet(PDF) 8 Page - STMicroelectronics

Part No. STB18N65M5
Description  N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STB18N65M5 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB18N65M5, STD18N65M5
8/18
Doc ID 023446 Rev 1
Figure 14.
Drain-source diode forward
characteristics
Figure 15.
Normalized BVDSS vs temperature
Figure 16.
Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode
VSD
0
20
ISD(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
TJ=150°C
TJ=25°C
AM05461v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA
1.08
AM10399v1
E
0
0
20
RG(
Ω)
(
μJ)
10
30
20
40
40
ID=9.5A
VDD=400V
Eon
Eoff
60
VGS=10V
80
100
120
140
160
AM12485v1


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