4

NPN & PNP General Purpose Amplifier

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

200

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

 1999 Fairchild Semiconductor Corporation

Thermal Characteristics

T

A

= 25°C unless otherwise noted

This complementary device is designed for use as a general purpose

amplifier and switch The useful dynamic range extends to 100 mA as a

switch and 100 MHz as an amplifier. Sourced from Process 23 and 66.

See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.

Symbol

Characteristic

Max

Units

FFB3946

FMB3946

Total Device Dissipation

Derate above 25

°C

300

2.4

700

5.6

mW

mW/

°C

Thermal Resistance, Junction to Ambient

415

180

°C/W

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

C1

B2

E2

E1

B1

C2

pin #1

FFB3946

SC70-6

Mark: .AB

Dot denotes pin #1

FMB3946

SuperSOT

Mark: .002

Dot denotes pin #1

C1

E1

C2

B1

E2

B2

pin #1

TRANSISTOR TYPE

C1 B1 E1

NPN

C2 B2 E2

PNP