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MPSW63 Datasheet(PDF) 2 Page - Motorola, Inc |
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MPSW63 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 4 page MPSW63 MPSW64 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –10 mAdc, VCE = –5.0 Vdc) MPSW63 MPSW64 (IC = –100 mAdc, VCE = –5.0 Vdc) MPSW63 MPSW64 hFE 5,000 10,000 10,000 20,000 — — — — — Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc) VCE(sat) — –1.5 Vdc Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc) VBE(on) — –2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT 125 — MHz 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. DC Current Gain Figure 2. “ON” Voltage Figure 3. Collector Saturation Region –1.0 –2.0 –0.5 IC, COLLECTOR CURRENT (mA) 200 50 5.0 3.0 2.0 –1.0 –100 –0.3 IC, COLLECTOR CURRENT (mA) –1.6 –2.0 –0.8 –0.4 0 IB, BASE CURRENT (mA) –0.6 –30 –10 –20 –7.0 –100 –200 –50 70 –3.0 –5.0 –10 –50 –2.0 –1.6 –1.4 –1.2 –1.0 –30 –70 –300 –5.0 –3.0 –0.7 30 100 –300 –1.2 –0.3 –100 –0.1 –1.0 –3.0 –10 –30 –300 –1 k –0.3 10 7.0 20 –0.5 –3 k –10 k –0.8 –1.8 TJ = 25°C IC = –10 mA –50 mA –100 mA –175 mA –300 mA TJ = 25°C IC/IB = 100 TJ = 125°C 25 °C –55 °C –10 V VCE = –2.0 V –5.0 V VBE(sat) @ IC/IB = 100 VCE(sat) @ IC/IB = 1000 VBE(on) @ VCE = –5.0 V |
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