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FFAF15U20DN Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FFAF15U20DN Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ![]() ©2000 Fairchild Semiconductor International Rev. F, September 2000 ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) T C=25° °°°C unless otherwise noted Thermal Characteristics Electrical Characteristics (per diode) T C=25 ° °°°C unless otherwise noted * Pulse Test: Pulse Width=300 µs, Duty Cycle=2% Symbol Parameter Value Units VRRM Peak Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current @ TC = 100°C15 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A TJ, TSTG Operating Junction and StorageTemperature - 65 to +150 °C Symbol Parameter Value Units RθJC Maximum Thermal Resistance, Junction to Case 3.1 °C/W Symbol Parameter Min. Typ. Max. Units VFM * Maximum Instantaneous Forward Voltage I F = 15A I F = 15A TC = 25 °C TC = 100 °C - - - - 1.2 1.0 V IRM * Maximum Instantaneous Reverse Current @ rated VR TC = 25 °C TC = 100 °C - - - - 15 150 µA trr Irr Qrr Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =15A, di/dt = 200A/µs) - - - - - - 40 3.5 70 ns A nC WAVL Avalanche Energy 0.5 - - mJ FFAF15U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • Power switching circuits • Output rectifiers • Freewheeling diodes • Switching mode power supply TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode |