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MPSW55 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MPSW55
Description  One Watt Amplifier Transistors
Download  4 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MPSW55 Datasheet(HTML) 2 Page - Motorola, Inc

   
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MPSW55 MPSW56
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –250 mAdc, VCE = –1.0 Vdc)
hFE
100
50
Collector – Emitter Saturation Voltage
(IC = –250 mAdc, IB = –10 mAdc)
VCE(sat)
–0.5
Vdc
Base–Emitter On Voltage
(IC = –250 mAdc, VCE = –5.0 Vdc)
VBE(on)
–1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz)
fT
50
MHz
Output Capacitance
(VCB = –10 Vdc, f = 1.0 MHz)
Cobo
15
pF
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–70
–100
–200
200
100
80
60
40
TJ = 125°C
25
°C
–55
°C
VCE = –1.0 V
–300
–500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.1
–10
–1.0
TJ = 25°C
IC = –10 mA
–0.05
–0.2
–0.5
–2.0
–5.0
–20
–50
–100 mA
–250 mA
–500 mA
–50
mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
–1.0
–0.8
–0.6
–0.4
–0.2
0
TJ = 25°C
VBE(on) @ VCE = –1.0 V
VCE(sat) @ IC/IB = 10
–0.5
VBE(sat) @ IC/IB = 10
–1.0
–2.0
–5.0
–10
–20
–50
–100 –200
–500


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