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MPSW55 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MPSW55
Description  One Watt Amplifier Transistors
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MPSW55 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW55
MPSW56
Unit
Collector – Emitter Voltage
VCEO
–60
–80
Vdc
Collector – Base Voltage
VCBO
–60
–80
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watt
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW55
MPSW56
V(BR)CEO
–60
–80
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–4.0
Vdc
Collector Cutoff Current
(VCE = –40 Vdc, IB = 0)
MPSW55
(VCE = –60 Vdc, IB = 0)
MPSW56
ICES
–0.5
–0.5
µAdc
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
MPSW55
(VCB = –60 Vdc, IE = 0)
MPSW56
ICBO
–0.1
–0.1
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
–0.1
µAdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW55/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSW55
MPSW56
*Motorola Preferred Device
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
*
© Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER


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