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FDW258P Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FDW258P
Description  P-Channel 1.8V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW258P Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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January 2002
2002 Fairchild Semiconductor Corporation
FDW258P Rev D (W)
FDW258P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –9 A, –12 V.
RDS(ON) = 11 m
Ω @ VGS = –4.5 V
RDS(ON) = 14 m
Ω @ VGS = –2.5 V
RDS(ON) = 20 m
Ω @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current – Continuous
(Note 1)
–9
A
– Pulsed
–50
PD
Power Dissipation
(Note 1a)
1.3
W
(Note 1b)
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
°C/W
(Note 1b)
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
258P
FDW258P
13’’
12mm
3000 units


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