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FDW258P Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. FDW258P
Description  P-Channel 1.8V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW258P Datasheet(HTML) 4 Page - Fairchild Semiconductor

   
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FDW258P Rev. D (W)
Typical Characteristics
0
1
2
3
4
5
0
10
2030
405060
Qg, GATE CHARGE (nC)
ID = -9A
VDS = -4V
-6V
-8V
0
1000
2000
3000
4000
5000
6000
7000
03
69
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
µs
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 114
oC/W
TA = 25
oC
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 114°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 114
oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.


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