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FDW258P Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. FDW258P
Description  P-Channel 1.8V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW258P Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDW258P Rev. D (W)
Typical Characteristics
0
20
40
60
80
00.511.5
2
2.5
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -4.5V
-2.5V
-2.0V
-1.8V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
204060
80
-ID, DRAIN CURRENT (A)
VGS = - 1.8V
-4.5V
-3.0V
-3.5V
-2.5V
-2.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID = -9A
VGS = - 4.5V
0.005
0.009
0.013
0.017
0.021
0.025
1
234
5
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -4.5A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
00.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TA = 125
oC
25oC
-55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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