FDT439N, Rev. C

FDT439N

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description

This N-Channel Enhancement mode field effect transistor

is produced using Fairchild Semiconductor's proprietary,

high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-

state resistance, and provide superior switching

performance. These products are well suited to low

voltage, low current applications such as notebook

computer power management, battery powered

circuits, and DC motor control.

Applications

June 1999

Features

R

widely used surface mount package.

1999 Fairchild Semiconductor Corporation

Symbol

Parameter

FDT439N

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±8V

Drain Current

- Continuous

(Note 1a)

6.3

A

- Pulsed

20

Power Dissipation for Single Operation

(Note 1a)

3W

(Note 1b)

1.3

(Note 1c)

1.1

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

42

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

12

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDT439N

FDT439N

13’’

12mm

2500 units

G

D

S

D

SOT-223

D

DS

G

G

D

S

(J23Z)

D

S

G