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IRFB7437PBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRFB7437PBF
Description  HEXFETPower MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB7437PBF Datasheet(HTML) 3 Page - International Rectifier

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IRFB7437PbF
www.irf.com
3
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
160
–––
–––
S
Qg
Total Gate Charge
–––
150
225
nC
Qgs
Gate-to-Source Charge
–––
41
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
51
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––99–––
td(on)
Turn-On Delay Time
–––
19
–––
ns
tr
Rise Time
–––
70
–––
td(off)
Turn-Off Delay Time
–––
78
–––
tf
Fall Time
–––
53
–––
Ciss
Input Capacitance
–––
7330
–––
pF
Coss
Output Capacitance
–––
1095
–––
Crss
Reverse Transfer Capacitance
–––
745
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) i ––– 1310 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
1735
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 250c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1000
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.0
1.3
V
dv/dt
Peak Diode Recovery
f
–––
3.1
–––
V/ns
trr
Reverse Recovery Time
–––
30
–––
ns
TJ = 25°C
VR = 34V,
–––30–––
TJ = 125°C
IF = 100A
Qrr
Reverse Recovery Charge
–––
24
–––
nC TJ = 25°C
di/dt = 100A/μs
g
–––25–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.3
–––
A
TJ = 25°C
TJ = 175°C, IS = 100A, VDS = 40V
g
ID = 30A
RG = 2.7
VDD = 20V
Conditions
VGS = 10V g
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
i, See Fig. 11
VGS = 0V, VDS = 0V to 32V
h
TJ = 25°C, IS = 100A, VGS = 0V
g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
VGS = 10V
g
ID = 100A, VDS =20V, VGS = 10V
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
D
S
G


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