FDS6630A Rev. C1

0.1

0.2

0.5

1

2

5

10

30

50

100

200

500

1000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

024

68

10

0

2

4

6

8

10

Q

, GATE CHARGE (nC)

g

I

= 6.5A

D

V

= 5 V

DS

10 V

15 V

0.1

0.3

1

3

10

30

50

0.01

0.1

1

10

100

V

, DRAIN-SO URCE VOLTAGE (V)

DS

RD

S(O

N)

LI

MI

T

V

= 1 0V

SINGL E PU LSE

R

=125 °C/W

T = 25°C

GS

A

θJA

DC

1s

10

ms

10

0m

s

10

s

1m

s

10

0us

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (s e c )

1

S i n g l e P u l s e

D = 0.5

0.1

0.05

0.02

0.0 1

0.2

D u t y C y c l e, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C /W

θJA

θJA

θJA

T - T = P * R

(t)

A

J

P(p k )

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE