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S34ML01G200TFI000 Datasheet(PDF) 64 Page - SPANSION

Part # S34ML01G200TFI000
Description  1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 I/O and 3V VCC
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S34ML01G200TFI000 Datasheet(HTML) 64 Page - SPANSION

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Spansion
®
SLC NAND Flash Memory for Embedded
S34ML01G2_04G2_01 August 3, 2012
Data
Sheet
(Adv an ce
Inf o r m a t io n)
9.
Error Management
9.1
System Bad Block Replacement
Over the lifetime of the device, additional Bad Blocks may develop. In this case, each bad block has to be
replaced by copying any valid data to a new block. These additional Bad Blocks can be identified whenever a
program or erase operation reports “Fail” in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the
block can be replaced by re-programming the current data and copying the rest of the replaced block to an
available valid block. Refer to Table 9.1 and Figure 9.1 for the recommended procedure to follow if an error
occurs during an operation.
Figure 9.1 Bad Block Replacement
Notes:
1. An error occurs on Nth page of the Block A during a program operation.
2. Data in Block A is copied to same location in Block B, which is valid block.
3. Nth page of block A, which is in controller buffer memory, is copied into Nth page of Block B.
4. Bad block table should be updated to prevent from erasing or programming Block A.
Table 9.1 Block Failure
Operation
Recommended Procedure
Erase
Block Replacement
Program
Block Replacement
Read
ECC (1 bit / 512+16 byte)
Data
buffer memory of the controller
N page
FFh
(2)
(3)
Data
FFh
Failure (1)
th
N page
th
Block A
Block B


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