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FDS4935 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FDS4935
Description  Dual 30V P-Channel PowerTrench MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS4935 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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March 2002
2002 Fairchild Semiconductor Corporation
FDS4935A Rev A(W)
FDS4935A
Dual 30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
Semiconductor’s
advanced
PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –7 A, –30 V
RDS(ON) = 23 m
Ω @ V
GS = –10 V
RDS(ON) = 35 m
Ω @ V
GS = –4.5 V
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous
(Note 1a)
–7
A
– Pulsed
–30
PD
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
PD
(Note 1c)
0.9
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4935A
FDS4935A
13’’
12mm
2500 units


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