UMX1NTN datasheet(2/4 Pages) ROHM

Part #	UMX1NTN

Description	General purpose transistors (dual transistors)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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2 / 4 page

EMX1 / UMX1N / IMX1

Transistors

2/3

!

Electrical characteristics (Ta = 25

°C)

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

Cob

Min.

60

50

7

−

120

−

2

−

0.1

560

0.4

3.5

VIC

=50

µA

IC

=1mA

IE

=50

µA

VCB

=60V

VEB

=7V

VCE=6V, IC=1mA

IC/IB=50mA/5mA

V

µA

−

V

PF

Typ. Max. Unit

Conditions

fT

−

180

−

VCE=12V, IE=

−2mA, f=100MHz

VCB=12V, IE=0A, f=1MHz

MHz

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Output capacitance

!

Packaging specifications

Package

Code

TN

T110

3000

Taping

Basic ordering

unit (pieces)

UMX1N

T2R

8000

EMX1

IMX1

Type

!

Electrical characteristic curves

0

0.1

0.2

0.5

2

20

50

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1

5

10

VCE=

6V

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1 Grounded emitter propagation

characteristics

0

20

40

60

80

100

0.4

0.8

1.2

1.6

2.0

0

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25˚C

IB=0A

0.40mA

0.50mA

0.45mA

Fig.2 Grounded emitter output

characteristics ( I )

0

2

8

10

4

8

12

16

4

6

20

IB=0A

Ta=25˚C

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

3

µA

6

µA

9

µA

12

µA

15

µA

18

µA

21

µA

24

µA

27

µA

30

µA

Fig.3 Grounded emitter output

characteristics ( II )

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