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KA1M0880B-TU Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. KA1M0880B-TU
Description  Fairchild Power Switch(FPS)
Download  10 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA1M0880B-TU Datasheet(HTML) 3 Page - Fairchild Semiconductor

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KA1L0880B/KA1M0880B
3
Electrical Characteristics (SFET part)
(Ta=25
°C unless otherwise specified)
Note:
Pulse test: Pulse width
≤ 300µS, duty cycle ≤ 2%
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Drain source breakdown voltage
BVDSS
VGS=0V, ID=50
µA
800
-
-
V
Zero gate voltage drain current
IDSS
VDS=Max., Rating,
VGS=0V
--
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static drain source on resistance (note)
RDS(ON)
VGS=10V, ID=5.0A
-
1.2
1.5
Forward transconductance (note)
gfs
VDS=15V, ID=5.0A
1.5
2.5
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
2460
-
pF
Output capacitance
Coss
-
210
-
Reverse transfer capacitance
Crss
-
64
-
Turn on delay time
td(on)
VDD=0.5BVDSS, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
--
90
nS
Rise time
tr
-
95
200
Turn off delay time
td(off)
-
150
450
Fall time
tf
-
60
150
Total gate charge
(gate-source+gate-drain)
Qg
VGS=10V, ID=8.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
-
-
150
nC
Gate source charge
Qgs
-
20
-
Gate drain (Miller) charge
Qgd
-
70
-
S
1
R
----
=


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