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KA1M0880BTU Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KA1M0880BTU Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 10 page 
KA1L0880B/KA1M0880B 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain source breakdown voltage BVDSS VGS=0V, ID=50 µA 800 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static drain source on resistance (note) RDS(ON) VGS=10V, ID=5.0A - 1.2 1.5 Ω Forward transconductance (note) gfs VDS=15V, ID=5.0A 1.5 2.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2460 - pF Output capacitance Coss - 210 - Reverse transfer capacitance Crss - 64 - Turn on delay time td(on) VDD=0.5BVDSS, ID=8.0A (MOSFET switching time are essentially independent of operating temperature) -- 90 nS Rise time tr - 95 200 Turn off delay time td(off) - 150 450 Fall time tf - 60 150 Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=8.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) - - 150 nC Gate source charge Qgs - 20 - Gate drain (Miller) charge Qgd - 70 - S 1 R ---- = |
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