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FDR8508P Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDR8508P Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDR8508P Rev. C FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications Load switch DC/DC converter Motor driving March 1999 Features -3.0 A, -30 V. R DS(ON) = 0.052Ω @ VGS = -10V R DS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench technology for extremely low R DS(ON) High power and current handling capability. Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. 1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter FDR8508P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) -3 A - Pulsed -20 PD Power Dissipation 0.8 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 156 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .8508 FDR8508P 13” 12mm 3000 units SuperSOT-8 D2 D2 D1 D1 S2 G2 S1 G1 pin #1 1 5 7 8 2 6 3 4 |
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