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FDP7030L Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FDP7030L
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
Download  4 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDP7030L Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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Electrical Characteristics (T
C = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD = 15 V, ID = 38 A
200
mJ
I
AR
Maximum Drain-Source Avalanche Current
38
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
30
V
BV
DSS/TJ
Breakdown Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
36
mV/
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = 24 V, VGS = 0 V
10
µA
T
J =125 °C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
1
1.5
2
V
V
GS(th)/TJ
Gate Threshold Voltage Temp.Coefficient
I
D = 250 µA, Referenced to 25
oC
-5
mV/
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 10 V, ID = 50 A
0.006
0.007
T
J = 125°C
0.009
0.011
V
GS = 5 V, ID = 40 A
0.009
0.01
I
D(on)
On-State Drain Current
V
GS = 10 V, VDS = 10 V
60
A
g
FS
Forward Transconductance
V
DS = 10 V, ID = 50 A
50
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 15 V, VGS = 0 V,
f = 1.0 MHz
2150
pF
C
oss
Output Capacitance
1290
pF
C
rss
Reverse Transfer Capacitance
420
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD = 15 V, ID = 75 A,
V
GS = 10 V, RGEN = 6
R
GS = 10
10
20
nS
t
r
Turn - On Rise Time
160
225
nS
t
D(off)
Turn - Off Delay Time
70
95
nS
t
f
Turn - Off Fall Time
140
195
nS
Q
g
Total Gate Charge
V
DS = 12 V
I
D = 50 A, VGS= 4.5 V
35
50
nC
Q
gs
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
18
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current (Note 1)
100
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
300
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = 50 A (Note 2)
1
1.3
V
T
J = 125°C
0.85
1.1
Notes
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP7030L Rev.D
1


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