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FDP7030L Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FDP7030L
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDP7030L Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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April 1998
FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_________________________________________________________________________________
Absolute Maximum Ratings
T
C = 25°C unless otherwise noted
Symbol
Parameter
FDP7030L
FDB7030L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current
- Continuous
(Note 1)
100
A
75
- Pulsed
(Note 1)
300
P
D
Total Power Dissipation @ T
C = 25°C
125
W
Derate above 25°C
0.83
W/°C
T
J,TSTG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
1.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
FDP7030L Rev.D
1
100 A, 30 V. R
DS(ON) = 0.007 @
V
GS=10 V
R
DS(ON) = 0.010 @
V
GS=5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON).
175°C maximum junction temperature rating.
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
S
D
G
© 1998 Fairchild Semiconductor Corporation


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