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FDB5690 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDB5690 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 16 page  FDP5690/FDB5690 Rev. C July 2000 2000 Fairchild Semiconductor International FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET Features • 32 A, 60 V. R DS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.032 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low R DS(ON). • 175 °C maximum junction temperature rating. Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter FDP5690 FDB5690 Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous 32 A - Pulsed 100 Total Power Dissipation @ TC = 25 °C 58 W PD Derate above 25 °C 0.4 W/ °C TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB5690 FDB5690 13’’ 24mm 800 FDP5690 FDP5690 Tube N/A 45 S D G S G D TO-220 FDP Series D G S TO-263AB FDB Seri es General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. |
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Similar Description - FDB5690 |
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