© Semiconductor Components Industries, LLC, 2012

November, 2012 − Rev. 5

1

Publication Order Number:

NTJD1155L/D

NTJD1155L

Power MOSFET

8 V, +1.3 A, High Side Load Switch with

Level−Shift, P−Channel SC−88

The NTJD1155L integrates a P and N−Channel MOSFET in a single

package. This device is particularly suited for portable electronic

equipment where low control signals, low battery voltages and high

load currents are needed. The P−Channel device is specifically

designed as a load switch using ON Semiconductor state−of−the−art

trench technology. The N−Channel, with an external resistor (R1),

functions as a level−shift to drive the P−Channel. The N−Channel

MOSFET has internal ESD protection and can be driven by logic

signals as low as 1.5 V. The NTJD1155L operates on supply lines from

1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both

Features

Rating

Symbol

Value

Unit

8.0

V

8.0

V

Continuous Load Current

(Note 1)

Steady

State

±1.3

A

±0.9

Power Dissipation

(Note 1)

Steady

State

0.40

W

0.20

Pulsed Load Current

±3.9

A

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode)

−0.4

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

320

°C/W

Junction−to−Foot – Steady State (Note 1)

220

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 inch sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

1

2,3

5

6

SIMPLIFIED SCHEMATIC

SC−88

(SOT−363)

CASE 419B

STYLE 30

MARKING

DIAGRAM

TB = Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

3

D2

1

S1

S2

4

2

D2

G1

5

D1/G2

6

4

Q2

Q1

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

8.0 V

170 mW @ −2.5 V

130 mW @ −4.5 V

±1.3 A

260 mW @ −1.8 V

Device

Package

ORDERING INFORMATION

NTJD1155LT1G

SC−88

(Pb−Free)

3000/Tape & Reel

1

TB M G

G

1

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