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NCP1216D65R2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1216D65R2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 18 page NCP1216, NCP1216A http://onsemi.com 3 Q Set Reset 1 V HV 1 2 3 4 5 6 7 8 Drv GND NC Current Sense Adj FB Skip Cycle Comparator 1.1 V Overload? Fault Duration 20 k 19 k Clock Jittering 57 k 25 k 96 k 25 k 5 V Figure 2. Internal Circuit Architecture − + − + Pull−up Resistor UVLO High and Low Internal Regulator HV Current Source Q Flip−Flop DCmax = 75% Reset 65 kHz 100 kHz 133kHz Ramp Compensation − + Vref 220 ns L.E.B $500 mA VCC Internal VCC 1 ms SS* * Available for ”A” version only. MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage, VCC Pin VCC 16 V Maximum Voltage on Low Power Pins (except Pin 8 and Pin 6) −0.3 to 10 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 mF 500 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Grounded 450 V Minimum Operating Voltage on Pin 8 (HV) 28 V Maximum Current into all Pins except VCC (Pin 6) and HV (Pin 8) when 10 V ESD Di- odes are Activated 5.0 mA Thermal Resistance Junction−to−Air, PDIP−7 Version Thermal Resistance Junction−to−Air, SOIC−8 Version RqJ−A RqJ−A 100 178 °C/W Maximum Junction Temperature TJMAX 150 °C Temperature Shutdown TSD 155 °C Hysteresis in Shutdown 30 °C Storage Temperature Range −60 to +150 °C ESD Capability, HBM Model (All Pins except VCC and HV) 2.0 kV ESD Capability, Machine Model 200 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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