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50RIA160S90M Datasheet(PDF) 3 Page - International Rectifier |
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50RIA160S90M Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page 50RIA Series Bulletin I2401 rev. B 01/05 dv/dt Max. critical rate of rise of 200 TJ = TJ max. linear to 100% rated VDRM off-state voltage 500 (*) TJ = TJ max. linear to 67% rated VDRM V/µs Parameter 50RIA Units Conditions Blocking P GM Maximum peak gate power 10 T J = TJ max, t p ≤ 5ms P G(AV) Maximum average gate power 2.5 I GM Max. peak positive gate current 2.5 A +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage I GT DC gate current required 250 T J = - 40°C to trigger 100 mA T J = 25°C 50 T J = 125°C V GT DC gate voltage required 3.5 T J = - 40°C to trigger 2.5 V T J = 25°C 10 W V 20 Max. required gate trigger cur- rent/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied V GD DC gate voltage not to trigger 0.2 V T J = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Parameter 50RIA Units Conditions T J = TJ max V DRM = rated voltage I GD DC gate current not to trigger 5.0 mA Triggering di/dt Max. rate of rise of turned-on T C = 125°C, VDM = rated VDRM current VDRM ≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, t p = 6µs, tr = 0.1µs max. VDRM ≤ 1600V 100 I TM = (2x rated di/dt) A td Typical delay time 0.9 T C = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15Ω source, t p = 20µs tq Typical turn-off time 110 T C = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, V R=50V Parameter 50RIA Units Conditions Switching µs (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90. Document Number: 93711 www.vishay.com 3 |
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