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IRFR-120 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFR-120 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 11 page IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix S13-0171-Rev. C, 04-Feb-13 2 Document Number: 91266 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 3.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 μA VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.6 Ab - - 0.27 Forward Transconductance gfs VDS = 50 V, ID = 4.6 A 1.6 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss -34 - Total Gate Charge Qg VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b -- 16 nC Gate-Source Charge Qgs -- 4.4 Gate-Drain Charge Qgd -- 7.7 Turn-On Delay Time td(on) VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b -6.8 - ns Rise Time tr -27 - Turn-Off Delay Time td(off) -18 - Fall Time tf -17 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 7.7 A Pulsed Diode Forward Currenta ISM -- 31 Body Diode Voltage VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb - 130 260 ns Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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