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MPS6714 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MPS6714
Description  One Watt Amplifier Transistors
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MPS6714 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6714
MPS6715
VCEO
30
40
Vdc
Collector – Base Voltage
MPS6714
MPS6715
VCBO
40
50
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS6714
MPS6715
V(BR)CEO
30
40
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6714
MPS6715
V(BR)CBO
40
50
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
MPS6714
(VCB = 50 Vdc, IE = 0)
MPS6715
ICBO
0.1
0.1
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
0.1
µAdc
1. Pulse Test: Pulse Width
v 30 ms; Duty Cycle v 2.0%.
Order this document
by MPS6714/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS6714
MPS6715
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
© Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER


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