March 2010

©2010 Fairchild Semiconductor Corporation

FDZ372NZ Rev.C2

www.fairchildsemi.com

1

FDZ372NZ

20 V, 4.7 A, 50 m

Ω

Features

area of 2x2 BGA

Ultra-thin package: less than 0.4 mm height when mounted

to PCB

HBM ESD protection level > 3200V (Note3)

RoHS Compliant

General Description

with state of the art "fine pitch" Thin WLCSP packaging process,

advanced WLCSP MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, ultra-low profile

Applications

Battery management

Load switch

Battery protection

BOTTOM

TOP

D

S

S

G

Pin 1

WL-CSP 1.0X1.0 Thin

Pin 1

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

20

V

Gate to Source Voltage

±8

V

Drain Current

-Continuous

(Note 1a)

4.7

A

-Pulsed

12

Power Dissipation

(Note 1a)

1.7

W

Power Dissipation

(Note 1b)

0.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Ambient

(Note 1a)

75

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

260

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

L

FDZ372NZ

WL-CSP 1.0x1.0 Thin

7 ’’

8 mm

5000 units