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FDZ372NZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDZ372NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page March 2010 ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev.C2 www.fairchildsemi.com 1 FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 m Ω Features Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2x2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB HBM ESD protection level > 3200V (Note3) RoHS Compliant General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications Battery management Load switch Battery protection BOTTOM TOP D S S G Pin 1 WL-CSP 1.0X1.0 Thin Pin 1 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±8 V ID Drain Current -Continuous TA = 25 °C (Note 1a) 4.7 A -Pulsed 12 PD Power Dissipation TA = 25 °C (Note 1a) 1.7 W Power Dissipation TA = 25 °C (Note 1b) 0.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 75 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 260 Device Marking Device Package Reel Size Tape Width Quantity L FDZ372NZ WL-CSP 1.0x1.0 Thin 7 ’’ 8 mm 5000 units |
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