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FDD10AN06A0 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD10AN06A0 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  ©2002 Fairchild Semiconductor Corporation FDD10AN06A0 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A. Device Marking Device Package Reel Size Tape Width Quantity FDD10AN06A0 FDD10AN06A0 TO-252AA 330mm 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TC = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 50A, VGS = 10V - 0.0094 0.0105 Ω ID = 25A, VGS = 6V - 0.015 0.027 ID = 50A, VGS = 10V, TJ = 175 oC - 0.020 0.023 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 1840 - pF COSS Output Capacitance - 340 - pF CRSS Reverse Transfer Capacitance - 110 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 50A Ig = 1.0mA 28 37 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 3.5 4.6 nC Qgs Gate to Source Gate Charge - 9.8 - nC Qgs2 Gate Charge Threshold to Plateau - 6.4 - nC Qgd Gate to Drain “Miller” Charge - 7.8 - nC tON Turn-On Time VDD = 30V, ID = 50A VGS = 10V, RGS = 10Ω -- 131 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 79 - ns td(OFF) Turn-Off Delay Time - 32 - ns tf Fall Time - 32 - ns tOFF Turn-Off Time - - 97 ns VSD Source to Drain Diode Voltage ISD = 50A - - 1.25 V ISD = 25A - - 1.0 V trr Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- - 27 ns QRR Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- - 23 nC |
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