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FDC6506P Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDC6506P Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDC6506P Rev. C a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 °C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and sharing the dissipated heat energy equally. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C-20 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-1 -1.8 -3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C4 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.8 A VGS = -10 V, ID = -1.8 A @125 °C VGS = -4.5 V, ID = -1.4 A 0.14 0.20 0.22 0.17 0.27 0.28 Ω ID(on) On-State Drain Current VGS = -10 V, VDS = - 5 V -10 A gFS Forward Transconductance VDS = -5 V, ID = -1.8 A 3 S Dynamic Characteristics Ciss Input Capacitance 190 pF Coss Output Capacitance 70 pF Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz 30 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 7 14 ns tr Turn-On Rise Time 8 16 ns td(off) Turn-Off Delay Time 14 25 ns tf Turn-Off Fall Time VDD = -15 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 26 ns Qg Total Gate Charge 2.3 3.5 nC Qgs Gate-Source Charge 1 nC Qgd Gate-Drain Charge VDS = -5 V, ID = -1.8 A, VGS = -10 V 0.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -0.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -1.2 V |
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