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FDC6327 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDC6327 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 12 page  FDC6327C, Rev. E Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions TypeMin Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA N-Ch P-Ch 20 -20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C ID = - 250 µA, Referenced to 25°C N-Ch P-Ch 12 -19 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V N-Ch P-Ch 1 -1 µA IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V All -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA N-Ch P-Ch 0.4 -0.4 0.9 -0.9 1.5 -1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C ID = - 250 µA, Referenced to 25°C N-Ch P-Ch -2.1 2.3 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 2.7 A VGS = 4.5 V, ID = 2.7 A, TJ = 125 °C VGS = 2.5 V, ID = 2.2 A VGS = -4.5 V, ID = -1.6 A VGS = -4.5 V, ID = -1.6 A, TJ = 125 °C VGS = -2.5 V, ID = -1.3 A N-Ch N-Ch N-Ch P-Ch P-Ch P-Ch 0.069 0.094 0.093 0.141 0.203 0.205 0.08 0.13 0.12 0.17 0.27 0.25 Ω ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V N-Ch P-Ch 8 -8 A gFS Forward Transconductance VDS = 5 V, ID = 2.7 A VDS = -5 V, ID = -1.9 A N-Ch P-Ch 7.7 4.5 S Dynamic Characteristics Ciss Input Capacitance N-Ch P-Ch 325 315 pF Coss Output Capacitance N-Ch P-Ch 75 65 pF Crss Reverse Transfer Capacitance N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch 35 24 pF |
Similar Part No. - FDC6327 |
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Similar Description - FDC6327 |
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