CM6300 datasheet(2/4 Pages) ONSEMI

Part #	CM6300

Description	EMI Filters with ESD Protection for SIM Card Applications

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Manufacturer	ONSEMI [ON Semiconductor]

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CM6300

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ELECTRICAL SPECIFICATIONS AND CONDITIONS

Table 2. PARAMETERS AND OPERATING CONDITIONS

Parameter

Rating

Units

Storage Temperature Range

–55 to +150

°C

Operating Temperature Range

–40 to +85

°C

Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

R1

Resistance

80

100

120

W

R2

Resistance

37.6

47

56.4

W

R3

Resistance

80

100

120

W

C

Capacitance on filter channels 1, 2 and 3

At 1 MHz, VIN = 0 V

13.4

16.7

20

pF

Capacitance on clamp channel (pin C2)

At 1 MHz, VIN = 0 V

8.2

10.3

12.4

pF

VB

Breakdown Voltage (Positive)

IF = 8 mA

6

6.8

20

V

VESD

ESD Protection Peak Discharge Voltage at A2, B1 and C1 pins

a) Contact Discharge per IEC 61000−4−2 standard

b) Air Discharge per IEC 61000−4−2 standard

(Note 2)

±15

kV

ESD Protection Peak Discharge Voltage at C2 pin

a) Contact Discharge per IEC 61000−4−2 standard

b) Air Discharge per IEC 61000−4−2 standard

(Note 2)

±15

kV

ESD Protection Peak Discharge Voltage at A3, B3 and C3 pins

a) Contact Discharge per IEC 61000−4−2 standard

b) Air Discharge per IEC 61000−4−2 standard

(Note 2)

±4

kV

1. All parameters specified at TA = 25°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W.

MECHANICAL SPECIFICATION

Table 4. VERTICAL STRUCTURE DIMENSIONS (nominal)

Ref.

Parameter

Material

Dimension

a

Die Thickness

Silicon

396 mm

h

Repassivation

Polyimide

10 mm

d

UBM−(Ti/Cu)

Plated Cu

5.0 mm

Sputtered Cu

0.4 mm

Sputtered Ti

0.1 mm

e

UBM Wetting Area

Diameter

280 mm

b

Bump Standoff

240 mm

f

Solder Bump Diameter

after Bump Reflow

320 mm

c

Metal Pad Height

AlSiCu

1.5 mm

g

Metal Pad Diameter

60 mm

D1

Finished Thickness

0.650 mm

D2

0.406 mm

Vertical Structure Specification*

Figure 1. Sectional View

* Daisy Chain CM6020

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