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DZ3S068D0L Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. DZ3S068D0L
Description  Silicon epitaxial planar type For surge absorption circuit
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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 1 page
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Ver. CED
Publication date: July 2012
1
DZ3S068D
Silicon epitaxial planar type
For surge absorption circuit
Features
Excellent rising characteristics of zener current IZ
Low zener operating resistance RZ
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 02
Packaging
DZ3S068D0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Total power dissipation *1
PT
150
mW
Electrostatic discharge *2
ESD
±
10
kV
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) (2 Diode total)
Solder in ( 0.6 mm × 0.6 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
V
Zener voltage *1, 2
VZ
IZ = 5 mA
6.46
7.14
V
Zener operating resistance
RZ
IZ = 5 mA
30
Zener rise operating resistance
RZK
IZ = 0.5 mA
60
Reverse current
IR
VR = 4 V
0.1
µA
Temparature coefficient of zener voltage *3
SZ
IZ = 5 mA
3.1
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Unit: mm
1: Cathode-1
2: Cathode-2
3: Anode-1, 2
Panasonic
SSMini3-F3-B
JEITA
SC-89
Code
SOT-490
1
2
3




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