AM90P03-02P datasheet(1/2 Pages) ANALOGPOWER

Part #	AM90P03-02P

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

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AM90P03-02P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM90P03-02_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, cellular and cordless telephones.

VDS (V)

rDS(on) m( )

ID (A)

2.9 @ VGS = 10V

3.8 @ VGS = 4.5V

PRODUCT SUMMARY

-30

90

a

P-Channel 30-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

TO-220 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

-40

VGS

±20

Continuous Drain Current

a

TC=25

o

C ID

90

IDM

390

IS

110

A

Power Dissipation

a

TC=25

o

C PD

300

W

TJ, Tstg

-55 to 175

o

C

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Paramete r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum Units

MaximumJunction-to-Ambient

a

RθJA

62.5

o

C/W

MaximumJunction-to-Case

RθJC

0.5

o

C/W

THERMALRESISTANCERATINGS

D

1

S

1

G

1

N-Channel MOSFET

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AM90P03-02P Datasheet(PDF) 1 Page - Analog Power

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