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MBR3045CTF-E1 Datasheet(PDF) 1 Page - BCD Semiconductor Manufacturing Limited

Part No. MBR3045CTF-E1
Description  HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
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Maker  BCDSEMI [BCD Semiconductor Manufacturing Limited]
Homepage  http://www.bcdsemi.com
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MBR3045CTF-E1 Datasheet(HTML) 1 Page - BCD Semiconductor Manufacturing Limited

 
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HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR3045C
1
BCD Semiconductor Manufacturing Limited
Mar. 2011 Rev. 1. 1
Data Sheet
General Description
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power convert-
ers. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
MBR3045C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
Features
·
Low Forward Voltage: 0.57V @ 125oC
·
Low Power Loss/High Efficiency
·
150oC Operating Junction Temperature
·
30A Total (15A Each Diode Leg)
·
Guard-ring for Stress Protection
·
High Surge Capacity
·
Pb-free Package
Applications
·
Power Supply Output Rectification
·
Power Management
·
Instrumentation
Main Product Characteristics
Mechanical Characteristics
·
Case: Epoxy, Molded
·
Epoxy Meets UL 94V-0 @ 0.125in.
·
Weight (Approximately): 1.9Grams
·
Finish: All External Surfaces Corrosion Resistant
and Terminal
·
Leads are Readily Solderable
·
Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
IF(AV)
2
×15A
VRRM
45V
TJ
150oC
VF(max)
0.57V
Figure 1. Package Types of MBR3045C
TO-220-3 (Optional)
TO-220F-3
TO-220-3 (2)


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