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IS45S16160G Datasheet(PDF) 2 Page - Integrated Silicon Solution, Inc

Part # IS45S16160G
Description  32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS45S16160G Datasheet(HTML) 2 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
3/20/2012
IS42S83200G, IS42S16160G
IS45S83200G, IS45S16160G
DEVICE OVERVIEW
The 256Mb SDRAM is a high speed CMOS, dynamic
random-accessmemorydesignedtooperatein3.3VVdd
and3.3VVddq memorysystemscontaining268,435,456
bits.Internallyconfiguredasaquad-bankDRAMwitha
synchronousinterface.Each67,108,864-bitbankisorga-
nizedas8,192rowsby512columnsby16bitsor8,192
rowsby1,024columnsby8bits.
The256MbSDRAMincludesanAUTOREFRESHMODE,
andapower-saving,power-downmode.Allsignalsare
registeredonthepositiveedgeoftheclocksignal,CLK.
AllinputsandoutputsareLVTTLcompatible.
The256MbSDRAMhastheabilitytosynchronouslyburst
dataatahighdataratewithautomaticcolumn-address
generation,theabilitytointerleavebetweeninternalbanks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burstaccess.
Aself-timedrowprechargeinitiatedattheendoftheburst
sequenceisavailablewiththeAUTOPRECHARGEfunction
enabled. Prechargeonebankwhileaccessingoneofthe
otherthreebankswillhidetheprechargecyclesandprovide
seamless,high-speed,random-accessoperation.
SDRAMreadandwriteaccessesareburstorientedstarting
ataselectedlocationandcontinuingforaprogrammed
number of locations in a programmed sequence.The
registration of an ACTIVE command begins accesses,
followedbyaREADorWRITEcommand.TheACTIVE
commandinconjunctionwithaddressbitsregisteredare
usedtoselectthebankandrowtobeaccessed(BA0,
BA1selectthebank;A0-A12selecttherow).TheREAD
or WRITE commands in conjunction with address bits
registeredareusedtoselectthestartingcolumnlocation
fortheburstaccess.
ProgrammableREADorWRITEburstlengthsconsistof
1,2,4and8locationsorfullpage,withaburstterminate
option.
CLK
CKE
CS
RAS
CAS
WE
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
A12
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
DATA IN
BUFFER
DATA OUT
BUFFER
DQML
DQMH
DQ 0-15
VDD/VDDQ
Vss/VssQ
13
13
9
13
13
9
16
16
16
16
512
(x 16)
8192
8192
8192
8192
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROW
ADDRESS
BUFFER
A11
2
FUNCTIONAL BLOCK DIAGRAM (FOR 4Mx16x4 BANKS SHOWN)


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