1

AM4926N

Analog Power

May, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4926_B

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

5.0

4.2

PRODUCT SUMMARY

20

Dual N-Channel 20-V (D-S) MOSFET

•Low r

Extends Battery Life

•

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

•

Low side high current DC-DC Converter

applications

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol

Limit

Units

20

± 12

± 30

1.7

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum

Units

t <= 10 sec

62.5

Steady State

80

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a