Infrared LED Chip

High Speed

GaAlAs/GaAlAs

1. Material

Substrate

GaAlAs (N Type) Removed

Epitaxial Layer GaAlAs (P/N Type)

2. Electrode

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

3. Electro-Optical

Parameter

Symbol

Min

Typ

Max

Unit

Condition

Characteristics

1.1

V

IF=10uA

1.6

1.8

V

IF=50mA

Reverse Voltage

5

V

IR=10uA

Power

9

12

mW

IF=50mA

850

nm

IF=50mA

∆λ

45

nm

IF=50mA

Rise Time

Tr

25

ns

Fall Time

Tf

13

ns

※

Note : Power is measured by Sorter E/T system with bare chip.

--------------------- 11.6mil x 11.6mil

(b) Bottom Area

--------------------- 12.6mil x 12.6mil

(c) Bonding Pad

---------------------

130um

(d) Chip Thickness

---------------------

7mil

(e) Junction Height

---------------------

5.7mil

P Side Electrode

N Side Electrode

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel.

+82 63 839 1111

Fax.

+82 63 835 8259

www.auk.co.kr

OPA8512

Forward Voltage

Wavelength

AUK Corp.

(c)

(a)

(b)

(e)

(d)