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AM3836N Datasheet(PDF) 1 Page - Analog Power |
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AM3836N Datasheet(HTML) 1 Page - Analog Power |
1 / 3 page 1 AM3836N Analog Power PRELIMINARY Publication Order Number: DS-AM3836_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) m(Ω)ID (A) 63 @ VGS = 4.5V 3.5 110 @ VGS = 2.5V 3.0 PRODUCT SUMMARY 30 N-Channel 30-V (D-S) MOSFET With Schottky Diode •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TSOP-6 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units t <= 10 sec 100 oC/W Steady-State 166 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA Vf (V) Diode Forward Voltage 30 0.48V @ 1.0A 1.0 SCHOTTKY PRODUCT SUMMARY VKA (V) IF (A) Symbol Limit Units VDS 30 VKA 30 VGS ±12 TA=25 oC± 3.5 TA=70 oC± 2.8 IDM ± 16 IS 1.25 IF 0.5 IFM 8 TA=25 oC1.3 TA=70 oC0.8 TA=25 oC1.0 TA=70 oC0.6 TJ, Tstg -55 to 150 oC A W Reverse Voltage (Schottky) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (Schottky) a Maximum Power Dissipation (MOSFET) a PD Operating Junction and Storage Temperature Range Continuous Source Current (MOSFET Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current (MOSFET) b V Gate-Source Voltage (MOSFET) Drain-Source Voltage (MOSFET) Continuous Drain Current (TJ=150 oC) (MOSFET)a ID D S G N-Channel MOSFET K A TSOP-6 Top View 1 2 34 K N/C D 6 5 G A S |
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