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BSP316PE6327 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part No. BSP316PE6327
Description  SIPMOS Small-Signal-Transistor Feature
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP316PE6327 Datasheet(HTML) 6 Page - Infineon Technologies AG

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BSP316P
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = -0.68 A, VGS = -10 V
-60
-20
20
60
100
°C
180
Tj
0
0.5
1
1.5
2
2.5
3
3.5
4
5
BSP 316 P
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60
-20
20
60
100
°C
160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0
4
8
12
16
20
24
28
V
36
-VDS
0
10
1
10
2
10
3
10
pF
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
VSD
-2
-10
-1
-10
0
-10
1
-10
A
BSP 316 P
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
20
12-11-26
Rev.1.
8
Page 6


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