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BSP316PE6327 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. BSP316PE6327
Description  SIPMOS Small-Signal-Transistor Feature
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP316PE6327 Datasheet(HTML) 3 Page - Infineon Technologies AG

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BSP316P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
|VDS|≥2*|ID|*RDS(on)max ,
ID=-0.54A
0.5
1
-
S
Input capacitance
Ciss
VGS=0, VDS=-25V,
f=1MHz
-
117
146
pF
Output capacitance
Coss
-
27.7
34.5
Reverse transfer capacitance
Crss
-
12
15
Turn-on delay time
td(on)
VDD=-50V, VGS=-10V,
ID=-0.68A, RG=6Ω
-
4.7
7
ns
Rise time
tr
-
7.5
11.2
Turn-off delay time
td(off)
-
67.4
101
Fall time
tf
-
25.9
38.9
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=-80V, ID=-0.68A
-
-0.2
-0.3
nC
Gate to drain charge
Qgd
-
-1.87
-2.8
Gate charge total
Qg
VDD=-80V, ID=-0.68A,
VGS=0 to -10V
-
-5.1
-6.4
Gate plateau voltage
V(plateau) VDD=-80V, ID=-0.68A
-
-2.7
-
V
Reverse Diode
Inverse diode continuous
forward current
IS
TA=25°C
-
-
-0.68
A
Inv. diode direct current, pulsed ISM
-
-
-2.72
Inverse diode forward voltage
VSD
VGS=0, IF=-0.68A
-
-0.85
-1.2
V
Reverse recovery time
trr
VR=-50V, IF=lS,
diF/dt=100A/µs
-
44.2
55.3
ns
Reverse recovery charge
Qrr
-
56.3
70.4
nC
20
12-11-26
Rev.1.
8
Page 3


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