©2012 Fairchild Semiconductor Corporation

FDD86102LZ Rev.C1

www.fairchildsemi.com

1

August 2012

FDD86102LZ

100 V, 35 A, 22.5 m

Ω

Features

HBM ESD protection level > 6 kV typical (Note 4)

Very low Qg and Qgd compared to competing trench

technologies

Fast switching speed

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

been especially tailored to minimize the on-state resistance and

switching loss. G-S zener has been added to enhance ESD

voltage level.

Applications

DC - DC Conversion

Inverter

Synchronous Rectifier

G

S

D

TO-252

D-PAK

(TO-252)

D

S

G

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

42

A

-Continuous (Silicon limited)

35

-Continuous

(Note 1a)

8

-Pulsed

40

Single Pulse Avalanche Energy

(Note 3)

84

mJ

Power Dissipation

54

W

Power Dissipation

(Note 1a)

3.1

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

2.3

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

40

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD86102LZ

FDD86102LZ

D-PAK(TO-252)

13 ’’

12 mm

2500 units