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LRB411DLT3G Datasheet(PDF) 1 Page - Leshan Radio Company |
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LRB411DLT3G Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 4 page Schottky barrier diode LRB411DLT1G Applications Sym bol Min. Typ. Max. Unit Conditions VF1- - 0.50 V IF=500m A VF2- - 0.30 V IF=10m A Revers e current IR1- - 30 µA VR=10V Capacitance between term inal Ct1 - 20 - pF VR=10V , f=1MHz Param eter Forwarad voltage Low current rectification Features 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta = 25 °C) Sym bol Unit VRM V VR V Io m A IFSM A Tj ℃ Ts tg ℃ Lim its 20 500 Param eter Electrical characteristics (Ta = 25 °C) Revers e voltage (DC) verage rectified forward current (*1) evers e voltage (repetitive peak) 40 orward current s urge peak (60Hz・1cyc)(*1) 3 unction tem perature torage tem perature *1) Rating of per diode 125 -40 to +125 R A F J S ( LESHAN RADIO COMPANY, LTD. LRB411DLT1G 1 3 2 SOT– 23 Device Marking Shipping 3000/Tape&Reel 10000/Tape&Reel LRB411DLT1G LRB411DLT3G Device marking and ordering information D3E D3E We declare that the material of product compliance with RoHS requirements. 1 ANODE 3 CATHODE Rev.O 1/4 |
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