LMBT2222ADW1T1G_12 datasheet(5/8 Pages) LRC

Part #	LMBT2222ADW1T1G

Description	Dual General Purpose Transistors NPN Silicon ROHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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Figure 5. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

10

2.0

0.1

Figure 6. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

1.0 2.0

5.0 10 20

50

0.2

0.5

0

100

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 Ω

500 µA, RS = 200 Ω

100 µA, RS = 2.0 kΩ

50 µA, RS = 4.0 kΩ

f = 1.0 kHz

IC = 50 µA

100 µA

500 µA

1.0 mA

4.0

6.0

8.0

10

2.0

0

50 100 200

500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k 100 k

Figure 7. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

10

2.0

0.1

1.0

2.0 3.0 5.0 7.0 10

20 30

50

0.2 0.3 0.5 0.7

Ccb

20

30

Ceb

Figure 8. Current–Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

70

100

200

300

50

500

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

VCE = 20 V

TJ = 25°C

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

Figure 10. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

0

+0.5

-1.0

-1.5

-2.5

RqVC for VCE(sat)

RqVB for VBE

0.1

1.0 2.0

5.0 10 20

50

0.2

0.5

100 200 500 1.0 k

1.0 V

-2.0

0.1

1.0 2.0

5.0 10 20

50

0.2

0.5

100 200 500

5/6

LMBT2222ADW1T1G

LESHAN RADIO COMPANY, LTD.

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