LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

3

xx

MARKING DIAGRAM

xx= Device Marking

(See Table Below)

LBC846ALT1G

Series

NPN Silicon

•

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

CO LLECT O R

1

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

L

BC846

L

BC847, LBC850

L

BC848, LBC849

VCEO

65

45

30

Vdc

Collector–Base Voltage

L

BC846

L

BC847, LBC850

L

BC848, LBC849

VCBO

80

50

30

Vdc

Emitter–Base Voltage

L

BC846

L

BC847, LBC850

L

BC848, LBC849

VEBO

6.0

6.0

5.0

Vdc

Collector Current – Continuous

IC

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 1.)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction to Ambient (Note 1.)

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2.)

TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction to Ambient (Note 2.)

RqJA

417

°C/W

Junction and Storage

Temperature Range

TJ,Tstg

–55 to

+150

°C

1

SOT–23

We declare that the material of product compliance with RoHS requirements.

2

3

Rev.O 1/13

1

2