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BU806 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BU806 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulsed: pulsed duration = 300 µs, duty cycle = 1.5% Symbol Parameter Value Units VCBO Collector-Base Voltage : BU806 : BU807 400 330 V V VCEO Collector-Emitter Voltage : BU806 : BU807 200 150 V V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 15 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~150 °C Symbol Parameter Test Condition Min. Max. Units VCEO (sus) * Collector-Emitter Sustaining Voltage : BU806 : BU807 IC = 100mA, IB = 0 200 150 V V ICES Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 100 100 µA µA ICEV Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V 100 100 µA µA IEBO Emitter Cut-off Current VBE = 6V, IC = 0 3 mA VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 50mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 50mA 2.4 V VF * Damper Diode Forward Voltage IF = 4A 2 V BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110 °°°° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 1.Base 2.Collector 3.Emitter 1 TO-220 |
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