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BU806 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BU806
Description  High Voltage & Fast Switching Darlington Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BU806 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulsed: pulsed duration = 300
µs, duty cycle = 1.5%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BU806
: BU807
400
330
V
V
VCEO
Collector-Emitter Voltage
: BU806
: BU807
200
150
V
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
8
A
ICP
*Collector Current (Pulse)
15
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
60
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO (sus)
* Collector-Emitter Sustaining Voltage
: BU806
: BU807
IC = 100mA, IB = 0
200
150
V
V
ICES
Collector Cut-off Current
: BU806
: BU807
VCE = 400V, VBE = 0
VCE = 330V, VBE = 0
100
100
µA
µA
ICEV
Collector Cut-off Current
: BU806
: BU807
VCE = 400V, VBE = -6V
VCE = 330V, VBE = -6V
100
100
µA
µA
IEBO
Emitter Cut-off Current
VBE = 6V, IC = 0
3
mA
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 5A, IB = 50mA
1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 5A, IB = 50mA
2.4
V
VF
* Damper Diode Forward Voltage
IF = 4A
2
V
BU806/807
High Voltage & Fast Switching Darlington
Transistor
• Using In Horizontal Output Stages of 110
°°°° Crt Video Displays
• BUILT-IN SPEED-UP Diode Between Base and Emitter
1.Base
2.Collector
3.Emitter
1
TO-220


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