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L2SC5635LT1G Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. L2SC5635LT1G
Description  High-Frequency Amplifier Transistor High gain,low noise
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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L2SC5635LT1G Datasheet(HTML) 1 Page - Leshan Radio Company

   
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LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
Features
1.High gain bandwidth product.(Typ.f
T
=8.0GHz)
2.High gain,low noise
3.Can operate at low voltage
L2SC5635LT1G
MAXIMUM RATINGS (TA = 25
°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
6
V
Emitter-base voltage
VEBO
Collector Current
IC
50
mA
Collector power dissipation
PC
225
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55~+125
°C
ELECTRICAL CHARACTERISTICS(TA = 25
°C)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Collector cutoff current
I
CBO
--
1.0
µAV
CB=10V,
Emitter cutoff current
I
EBO
--
1.0
µAV
EB=1V,
Insertion power gain
21
-
DC current transfer ratio
h
FE
50
-
250
-
V
CE
I
C
=5V,
Transition frequency
f
T
5.0
8.0
-
GHz
V
CE=5V,
I
E=10mA
Output capacitance
Cob
-
1.0
pF
V
CB=5V,
I
E=0A, f=1MHz
Noise factor
NF
-
1.4
-
dB
V
CE=5V,
I
C=5mA, f=1GHz
DEVICE MARKING
L2SC5635LT1G=HF1
1
BASE
2
EMITTER
COLLECTOR
3
1
2
3
4.
ORDERING INFORMATION
Device
Package
Shipping
L2SC5635LT1G
3000/Tape & Reel
SOT-23
L2SC5635LT3G
SOT-23
10000/Tape & Reel
We declare that the material of product compliance with RoHS requirements.
1.5
V
S
2
-
dB
9.0
12.0
CE=5V,
I
C=10A, f=1GHz
V
I
C=0mA
I
E=0mA
=10mA
Rev.O 1/3
SOT –23


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