0.040 (1.02)

0.100 (2.54)

0.050 (1.27)

45°

0.040 (1.02)

0.030 (0.76)

NOM

0.184 (4.67)

0.209 (5.31)

0.50 (12.7)

MIN

0.255 (6.48)

Collector

(Case)

Base

Emitter

Ø0.100 (2.54)

0.020 (0.51) 3X

1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning

agents.

6. As long as leads are not under any stress or spring tension.

7. Light source is a GaAs LED emitting light at a peak wavelength of

940 nm.

PACKAGE DIMENSIONS

FEATURES

• Hermetically sealed package

• Narrow reception angle

• European “Pro Electron” registered

Parameter

Symbol

Rating

Unit

Operating Temperature

-65 to +125

°C

Storage Temperature

-65 to +150

°C

240 for 5 sec

°C

260 for 10 sec

°C

Collector-Emitter Voltage

45

V

Collector-Base Voltage

45

V

Emitter-Base Voltage

5V

300

mW

600

mW

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

BPW36/BPW37

HERMETIC SILICON PHOTOTRANSISTOR

DESCRIPTION

• The BPW36/37 are silicon phototransistors

mounted in narrow angle TO-18 packages.

E

C

B

SCHEMATIC



 2001 Fairchild Semiconductor Corporation

DS300279

3/13/01

1 OF 4

www.fairchildsemi.com