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BD241C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BD241C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW=350 µs, duty Cycle≤2% Pulsed Symbol Parameter Value Units VCEO Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C 45 60 80 100 V V V V VCER Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C 55 70 90 115 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 5 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C IC = - 30mA, IB = 0 45 60 80 100 V V V V ICEO Collector Cut-off Current : BD241/A : BD241B/C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA ICES Collector Cut-off Current : BD241 : BD241A : BD241B : BD241C VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 0.2 0.2 0.2 0.2 mA mA mA mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain VCE = 4V, IC = 1A VCE = 4V, IC = 3A 25 10 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.2 V VBE(on) * Base-Emitter ON Voltage VCE = 4V, IC = 3A 1.8 V BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively 1.Base 2.Collector 3.Emitter 1 TO-220 |
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Similar Description - BD241C |
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