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BCP55 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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BCP55 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 5.0 V ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 125 °C 100 10 nA µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10 µA ON CHARACTERISTICS hFE DC Current Gain IC = 5.0 mA, VCE = 2.0 V IC = 150 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V 25 40 25 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 1.0 V |
Similar Part No. - BCP55 |
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Similar Description - BCP55 |
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