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S1xB-13-F Datasheet(PDF) 2 Page - Diodes Incorporated |
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S1xB-13-F Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page S1A/B - S1M/B Document number: DS16003 Rev. 22 - 2 2 of 4 www.diodes.com October 2011 © Diodes Incorporated S1A/B - S1M/B Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol S1 A/AB S1 B/BB S1 D/DB S1 G/GB S1 J/JB S1 K/KB S1 M/MB Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @ TT = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load IFSM 30 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 4) RθJT 30 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Forward Voltage @ IF = 1.0A VFM - - 1.1 V Peak Reverse Leakage Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°C IRM - - - - 5.0 100 μA Reverse Recovery Time (Note 5) trr - 1.8 3.0 μs Typical Total Capacitance (Note 6) CT - 10 - pF Notes: 4. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm 2 (0.013 mm thick) copper pads as heat sink. 5. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 6. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 0 0.2 0.4 0.6 0.8 1.0 40 60 80 100 120 140 160 180 T , TERMINAL TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve T ° Resistive or inductive load 0.4 0.8 0.01 0.1 10 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 1.0 01.6 1.2 |
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